Электронная библиотека (репозиторий) Томского государственного университета
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Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy 1538 1718 203
Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots 627 628 7
Localization of electrons in dome-shaped GeSi/Si islands 1281 2197 934
Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface 441 585 171
Suppression of hole relaxation in small sized Ge/Si quantum dots 577 579 6
Phonon bottleneck in p-type Ge/Si quantum dots 967 1232 288
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Armbrister, V. A.

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Armbrister, V. A.

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